PART |
Description |
Maker |
2N4936 |
Trans GP BJT PNP 200V 0.2A 3-Pin TO-39
|
New Jersey Semiconductors
|
IRFG5210 IRFG5210N IRFG5210P IRFG5210-15 |
Simple Drive Requirements 200V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY 200V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package 200V Single N-Channel Hi-Rel MOSFET in a MO-036AB package 200V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
|
IRF730ASTRRPBF IRF730STRL F730ALPBF |
Trans MOSFET N-CH 400V 5.5A 3-Pin(2 Tab) D2PAK T/R Trans MOSFET N-CH 400V 5.5A 3-Pin(2 Tab) TO-263AB T/R Trans MOSFET N-CH 400V 5.5A 3-Pin(3 Tab) TO-262
|
Vishay Siliconix
|
IRFB38N20D IRFSL38N20D IRFS38N20D IRFS38N20DTRL |
Power MOSFET(Vdss=200V/ Rds(on)max=0.054ohm/ Id=44A) TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 44A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五(巴西)直|4A(丁)|63AB HEXFET? Power MOSFET Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A)
|
International Rectifier, Corp. Fairchild Semiconductor IRF[International Rectifier]
|
IRFD210 |
200V Single N-Channel HEXFET Power MOSFET in a HEXDIP package Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.60A)
|
International Rectifier
|
STD5NB20 6365 |
N - CHANNEL 200V - 0.70ohm - 5A DPAK PowerMESHO MOSFET From old datasheet system N - CHANNEL 200V - 0.70 - 5A DPAK PowerMESH TM MOSFET N - CHANNEL 200V - 0.70 Ohm - 5A DPAK PowerMESH MOSFET
|
STMicroelectronics SGS Thomson Microelectronics
|
IRHNB8260 IRHNB3260 IRHNB4260 IRHNB7260 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) | SMT RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package 200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
|
IRF[International Rectifier]
|
IRFB31N20D IRFS31N20DTRL |
Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A) TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五(巴西)直|1A条(丁)|63AB Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)最大值\u003d 0.082ohm,身份证\u003d 31A条)
|
International Rectifier, Corp.
|
IRF9640 IRF9640PBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-11A) Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A) Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-11A)
|
IRF[International Rectifier]
|
FQI32N20C FQB32N20C FQB32N20CTM |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET 28 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|